Does Interstitial Boron in Silicon Possess Negative-U Properties?

Hans J. Hoffmann
Phys. Rev. Lett. 51, 1722 – Published 31 October 1983
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Abstract

  • Received 5 July 1983

DOI:https://doi.org/10.1103/PhysRevLett.51.1722

©1983 American Physical Society

Authors & Affiliations

Hans J. Hoffmann

  • Schott Glaswerke D-6500 Mainz, Federal Republic of Germany

Comments & Replies

Harris, Newton, and Watkins Respond

R. D. Harris, J. L. Newton, and G. D. Watkins
Phys. Rev. Lett. 51, 1723 (1983)

Original Article

Negative-U Properties for Interstitial Boron in Silicon

R. D. Harris, J. L. Newton, and G. D. Watkins
Phys. Rev. Lett. 48, 1271 (1982)

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Vol. 51, Iss. 18 — 31 October 1983

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