Carrier Density Dependence of Magnetoresistance in Tl2Mn2xRuxO7 Pyrochlores

B. Martínez, R. Senis, J. Fontcuberta, X. Obradors, W. Cheikh-Rouhou, P. Strobel, C. Bougerol-Chaillout, and M. Pernet
Phys. Rev. Lett. 83, 2022 – Published 6 September 1999
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Abstract

The magnetotransport properties of the Tl2Mn2xRuxO7 pyrochlore are studied. It is shown that Ru4+ substitution in the Mn4+ network provides a convenient way to modify the charge density in the Tl-O band without disrupting it with foreign cations. The experimental data reveal that the magnetoresistance has a quadratic dependence on the magnetization and increases when the charge density in the Tl-O conduction band is reduced. Above the Curie temperature, activated resistivity is found, signaling carrier localization and suggesting the existence of spin polarons. These results provide a solid support to recent theoretical predictions for magnetoresistance in low carrier density ferromagnets.

  • Received 21 December 1998

DOI:https://doi.org/10.1103/PhysRevLett.83.2022

©1999 American Physical Society

Authors & Affiliations

B. Martínez*, R. Senis, J. Fontcuberta, and X. Obradors

  • Institut de Ciència de Materials de Barcelona–CSIC, Campus Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

W. Cheikh-Rouhou, P. Strobel, C. Bougerol-Chaillout, and M. Pernet

  • Laboratoire de Cristallographie–CNRS, BP 166, Grenoble Cedex 9, France

  • *To whom correspondence should be addressed.

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Vol. 83, Iss. 10 — 6 September 1999

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