Topological Interaction of Coulombic Impurity Centers with Dislocations in Semiconductors

Y. T. Rebane; J. W. Steeds

doi:10.1103/PhysRevLett.75.3716

Topological Interaction of Coulombic Impurity Centers with Dislocations in Semiconductors

Y. T. Rebane and J. W. Steeds

Phys. Rev. Lett. 75, 3716 – Published 13 November 1995

Abstract

A phenomenon of the topological interaction of impurities with dislocations was studied theoretically. It was found that this interaction reduces the binding energies of carriers to Coulombic impurities for off-center valleys in semiconductors by more than a factor of 2 in the case of an isotropic carrier mass and by a factor of 4 in the case of highly anisotropic valleys.

Received 24 April 1995

DOI:https://doi.org/10.1103/PhysRevLett.75.3716

Authors & Affiliations

Y. T. Rebane^1,2 and J. W. Steeds¹

¹H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, United Kingdom
²A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia