Evolution and control of ion-beam divergence in applied-B diodes

M. P. Desjarlais, T. D. Pointon, D. B. Seidel, R. S. Coats, M. L. Kiefer, J. P. Quintenz, and S. A. Slutz
Phys. Rev. Lett. 67, 3094 – Published 25 November 1991
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Abstract

The time evolution of beam divergence induced by electomagnetic instabilities in applied-B ion diodes is examined using the 3D particle-in-cell code quicksilver. The evolution is generally characterized by a high-frequency, low-divergence phase, associated with the diocotron mode, followed by a low-frequency, high-divergence phase, associated with the two-stream-like ion mode. Limiting the extent of the electron density profile evolution allows the diocotron phase to be sustained with a resulting divergence of ≊10 mrad.

  • Received 3 July 1991

DOI:https://doi.org/10.1103/PhysRevLett.67.3094

©1991 American Physical Society

Authors & Affiliations

M. P. Desjarlais, T. D. Pointon, D. B. Seidel, R. S. Coats, M. L. Kiefer, J. P. Quintenz, and S. A. Slutz

  • Sandia National Laboratories, Albuquerque, New Mexico 87185

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Vol. 67, Iss. 22 — 25 November 1991

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