Phys. Rev. Lett. 11, 328 (1963) - Empirical Characterization of Low-Temperature Magnetoresistance Effects in Heavily Doped Ge and Si

Empirical Characterization of Low-Temperature Magnetoresistance Effects in Heavily Doped Ge and Si

H. Roth, W. D. Straub, W. Bernard, and J. E. Mulhern, Jr.

Phys. Rev. Lett. 11, 328 – Published 1 October 1963

Abstract

Received 8 July 1963

DOI:https://doi.org/10.1103/PhysRevLett.11.328

©1963 American Physical Society

Authors & Affiliations

H. Roth, W. D. Straub, and W. Bernard

Raytheon Research Division, Waltham, Massachusetts

J. E. Mulhern, Jr.

Physics Department, University of New Hampshire, Durham, New Hampshire

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Vol. 11, Iss. 7 — 1 October 1963

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