• Open Access

Spin-flipping polarized electrons

V. S. Morozov, V. A. Anferov, B. B. Blinov, A. D. Krisch, W. Lorenzon, C. C. Peters, K. Yonehara, M. Farkhonden, W. A. Franklin, K. D. Jacobs, H. Kolster, S. Sirca, T. Smith, E. Tsentalovich, J. Vieregg, G. T. Zwart, and E. Six
Phys. Rev. ST Accel. Beams 4, 104002 – Published 31 October 2001
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Abstract

We recently used a prototype rf dipole magnet to study the spin flipping of a 669 MeV horizontally polarized electron beam stored in the presence of a nearly full Siberian snake in the new MIT-Bates storage ring. We flipped the spin by ramping the rf dipole's frequency through an rf-induced depolarizing resonance. After optimizing the frequency ramp parameters, we used multiple spin flipping to measure a spin-flip efficiency of 94.5±2.5%. The spin-flip efficiency was apparently limited by the field strength in the air-core prototype rf dipole magnet. This unexpectedly high efficiency indicates that very efficient spin flipping of the ring's stored polarized electron beam should be possible using the much stronger ferrite spin flipper, which is now being built by the University of Michigan's Spin Physics Center.

  • Received 9 August 2001

DOI:https://doi.org/10.1103/PhysRevSTAB.4.104002

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Authors & Affiliations

V. S. Morozov, V. A. Anferov*, B. B. Blinov, A. D. Krisch, W. Lorenzon, C. C. Peters, and K. Yonehara

  • Spin Physics Center, University of Michigan, Ann Arbor, Michigan 48109-1120

M. Farkhonden, W. A. Franklin, K. D. Jacobs, H. Kolster, S. Sirca, T. Smith, E. Tsentalovich, J. Vieregg, and G. T. Zwart

  • MIT-Bates Linear Accelerator Center, 21 Manning Avenue, Middleton, Massachusetts 01949

E. Six

  • Arizona State University, Tempe, Arizona 85287

  • *Present address: Indiana University Cyclotron Facility, Bloomington, IN 47408-0768.

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Vol. 4, Iss. 10 —

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