For the spherically averaged Hamiltonian approximation an accurate nonvariational calculation is reported of the energies of the one-dimensional bands split off from the edge of the valence band by the shear strain fields of screw dislocations in various cubic semiconductors. The calculation gives significantly greater binding energies for holes than previous variational calculations and also a different order of the first two levels when the ratio of light- and heavy-hole masses is less than 0.19. The calculation was performed on the basis of the effective-mass and deformation-potential approximations. This approach is justified because the resulting binding energies are much smaller than the energy gaps. The results may be used for the interpretation of various dislocation-related phenomena such as luminescence, absorption, microwave conductivity, and combined resonance (a kind of electric-dipole spin resonance).

• Received 30 June 1993

DOI:https://doi.org/10.1103/PhysRevB.48.14963