Elastic properties of (N<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mo>(</mo><mi mathvariant="normal">C</mi><mrow><msub><mrow><mi mathvariant="normal">H</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow><mo>)</mo></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span> H) (I) (TCNQ)

J. W. Brill; A. J. Epstein; J. S. Miller

doi:10.1103/PhysRevB.20.681

Elastic properties of (N ${(C H_{3})}_{3}$ H) (I) (TCNQ)

J. W. Brill, A. J. Epstein, and J. S. Miller

Phys. Rev. B 20, 681 – Published 15 July 1979

Abstract

We present the results of a study of the temperature dependence of the Young's modulus and internal friction of (N ${(C H_{3})}_{3}$ H)(I)(TCNQ). The Young's modulus was measured in a direction parallel to the TCNQ (tetracyanoquinodimethane) stacking axis using a vibrating reed technique. The results confirmed a transition observed via transport measurements at 150 K and predicted a transition (later observed) at 89 K. The data support the model that this system is a semiconductor at temperatures above 150 K despite the "metal-like" dc conductivity.

Received 26 January 1979

DOI:https://doi.org/10.1103/PhysRevB.20.681

Authors & Affiliations

J. W. Brill^*

Physics Department, Stanford University, Stanford, California 94305

A. J. Epstein and J. S. Miller^†

Xerox Webster Research Center, Rochester, New York 14644

^*Present address: Phys. Dept. Univ. of S. Calif., Los Angeles, Calif. 90007.
^†Present address: Occidental Research Center, P.O. Box 19601, Irvine, Calif. 92713.

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Vol. 20, Iss. 2 — 15 July 1979

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