Phonon-drag effect in GaAs-AlxGa1xAs heterostructures at very low temperatures

C. Ruf, H. Obloh, B. Junge, E. Gmelin, K. Ploog, and G. Weimann
Phys. Rev. B 37, 6377 – Published 15 April 1988
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Abstract

The thermoelectric power of high-mobility GaAs-AlxGa1xAs heterojunctions has been investigated in the temperature range from 0.1 to 10 K in order to study the phonon-drag effect. The phonon-drag contribution to the Seebeck coefficient can be well described by the classical T3 dependence below 2.5 K. At very low temperatures (T<0.6 K), the phonon drag becomes vanishingly small and a linear temperature dependence of the diffusion thermoelectric power was resolved. In addition, the thermoelectric power was measured in magnetic fields up to 7 T and different temperature dependences were found for the maxima of the thermoelectric power oscillations at different Landau levels.

  • Received 10 September 1987

DOI:https://doi.org/10.1103/PhysRevB.37.6377

©1988 American Physical Society

Authors & Affiliations

C. Ruf, H. Obloh, B. Junge, E. Gmelin, and K. Ploog

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, Postfach 80 06 65, D-7000 Stuttgart 80, Federal Republic of Germany

G. Weimann

  • Forschungsinstitut der Deutschen Bundespost, Am Kavalleriesand 3, D-6100 Darmstadt, Federal Republic of Germany

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Issue

Vol. 37, Iss. 11 — 15 April 1988

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