Through a Monte Carlo approach, we have studied the a-Si growth by sputtering. We have studied the effect of the energetic–silicon-atom and –argon-ion bombardment on the structure of the resulting films. We found two competing processes in the film growth, depending on the ${\mathrm{Ar}}^{+}$ energy and Ar-Si current ratio. We also found that the coalescence of the a-Si structure cannot be attributed to silicon bombardment. On the other hand, energetic–argon-ion bombardment may be responsible for such coalescence.

• Received 10 November 1986

DOI:https://doi.org/10.1103/PhysRevB.35.7611