Phys. Rev. B 60, 714 (1999) - Erratum: Random and channeling stopping powers and charge-state distributions in silicon for 0.2--1.2 MeV/u positive heavy ions [Phys. Rev. B 59, 226 (1999)]

Erratum: Random and channeling stopping powers and charge-state distributions in silicon for 0.2–1.2 MeV/u positive heavy ions [Phys. Rev. B 59, 226 (1999)]

W. Jiang, R. Grötzschel, W. Pilz, B. Schmidt, and W. Möller

Phys. Rev. B 60, 714 – Published 1 July 1999

Abstract

Received 4 March 1999

DOI:https://doi.org/10.1103/PhysRevB.60.714

©1999 American Physical Society

Authors & Affiliations

W. Jiang, R. Grötzschel, W. Pilz, B. Schmidt, and W. Möller

Original Article

Random and channeling stopping powers and charge-state distributions in silicon for 0.2–1.2 MeV/u positive heavy ions

W. Jiang, R. Grötzschel, W. Pilz, B. Schmidt, and W. Möller

Phys. Rev. B 59, 226 (1999)

References

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Issue

Vol. 60, Iss. 1 — 1 July 1999

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