Current-voltage characteristic and stability in resonant-tunneling n-dopedsemiconductor superlattices

A. Wacker, M. Moscoso, M. Kindelan, and L. L. Bonilla
Phys. Rev. B 55, 2466 – Published 15 January 1997
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Abstract

We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable domains occur. This bound may be useful for the design of superlattices exhibiting self-sustained current oscillations. Furthermore we explain why stable domains occur in superlattices in contrast to the usual Gunn diode.

  • Received 26 April 1996

DOI:https://doi.org/10.1103/PhysRevB.55.2466

©1997 American Physical Society

Authors & Affiliations

A. Wacker, M. Moscoso, M. Kindelan, and L. L. Bonilla

  • Escuela Politécnica Superior, Universidad Carlos III de Madrid, Butarque 15, 28911 Leganés, Spain

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Vol. 55, Iss. 4 — 15 January 1997

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