Self-oscillations of domains in doped GaAs-AlAs superlattices

J. Kastrup, R. Klann, H. T. Grahn, K. Ploog, L. L. Bonilla, J. Galán, M. Kindelan, M. Moscoso, and R. Merlin
Phys. Rev. B 52, 13761 – Published 15 November 1995
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Abstract

Self-sustained oscillations of the current have been observed and simulated in a doped GaAs-AlAs superlattice under voltage control. Depending on the applied bias the detected frequencies vary betwen 250 kHz at low voltages and 20 MHz at high voltages. Amplitude and frequency decrease with increasing carrier density until, at very high excitation densities, stable electric-field domains are formed. A discrete drift model reproduces the current oscillations and shows that they can be attributed to the spatial oscillation of the boundary between the two domains.

  • Received 31 May 1995

DOI:https://doi.org/10.1103/PhysRevB.52.13761

©1995 American Physical Society

Authors & Affiliations

J. Kastrup, R. Klann, H. T. Grahn, and K. Ploog

  • Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

L. L. Bonilla, J. Galán, M. Kindelan, and M. Moscoso

  • Escuela Politécnica Superior, Universidad Carlos III de Madrid, Butarque 15, E-28911 Leganés, Spain

R. Merlin

  • The Harrison M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor, Michigan 48109-1120

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Issue

Vol. 52, Iss. 19 — 15 November 1995

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