Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2

Hongyuan Wang, Hao Su, Jiuyang Zhang, Wei Xia, Yishi Lin, Xiaolei Liu, Xiaofei Hou, Zhenhai Yu, Na Yu, Xia Wang, Zhiqiang Zou, Yihua Wang, Qifeng Liang, Yuhua Zhen, and Yanfeng Guo
Phys. Rev. B 100, 115127 – Published 13 September 2019

Abstract

We report systematic magnetotransport measurements and ab initio calculations on single-crystalline TaP2, a member of the transition-metal dipnictides. We observed unsaturated magnetoresistance (MR) reaching ∼700% at a magnetic field (B) of 9 T at 2 K when B is perpendicular to the electric current (I). We also found negative longitudinal MR (n-LMR) when B slightly deviates from the direction of I along with striking Shubnikov–de Haas (SdH) oscillations. Our analysis on the SdH oscillations uncovers three fundamental magnetic oscillation frequencies of 72, 237, and 356 T, slightly different from the theoretical calculations which reveal one hole pocket and two electron pockets at the L point and one electron pocket at the Z point of the Brillouin zone. The inconsistency might be due to that one Fermi pocket is out of the detection capability by our measurements. The analysis also reveals a nonzero Berry phase, indicating nontrivial band topology. The n-LMR could be fitted with the Adler-Bell-Jackiw chiral anomaly equation but the origin remains yet ambiguous. The ab initio calculations suggest TaP2 as a weak topological insulator with the Z2 indices of (0; 111), which exhibits topological surface states on the (001) surface.

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  • Received 31 May 2019
  • Revised 21 August 2019

DOI:https://doi.org/10.1103/PhysRevB.100.115127

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hongyuan Wang1,2,3,*, Hao Su1,2,*, Jiuyang Zhang4, Wei Xia1,2,3, Yishi Lin5, Xiaolei Liu1,2, Xiaofei Hou1, Zhenhai Yu1, Na Yu6, Xia Wang6, Zhiqiang Zou6, Yihua Wang5, Qifeng Liang7,†, Yuhua Zhen4,‡, and Yanfeng Guo1,2,§

  • 1School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 4School of Materials Science and Engineering, China University of Petroleum, Qingdao 266580, China
  • 5Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200438, China
  • 6Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 7Department of Physics, University of Shaoxing, Shaoxing 312000, China

  • *These authors contributed equally to this work.
  • qfliang@usx.edu.cn
  • zhenyh@upc.edu.cn
  • §guoyf@shanghaitech.edu.cn

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Vol. 100, Iss. 11 — 15 September 2019

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