Spin-accumulation induced magnetic texture in a metal-insulator bilayer

Dion M. F. Hartmann, Andreas Rückriegel, and Rembert A. Duine
Phys. Rev. B 101, 214440 – Published 24 June 2020
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Abstract

We consider the influence of a spin accumulation in a normal metal on the magnetic statics and dynamics in an adjacent magnetic insulator. In particular, we focus on arbitrary angles between the spin accumulation and the easy axis of the magnetic insulator. Based on Landau-Lifshitz-Gilbert phenomenology supplemented with magnetoelectronic circuit theory, we find that the magnetic texture twists into a stable configuration that turns out to be described by a virtual, or image, domain wall configuration, i.e., a domain wall outside the ferromagnet. We show that even when the spin accumulation is perpendicular to the anisotropy axis, the magnetic texture develops a component parallel to the spin accumulation for sufficiently large spin bias. The emergence of this parallel component gives rise to threshold behavior in the spin Hall magnetoresistance and nonlocal magnon transport. This threshold can be used to design novel spintronic and magnonic devices that can be operated without external magnetic fields.

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  • Received 13 March 2020
  • Revised 30 May 2020
  • Accepted 2 June 2020

DOI:https://doi.org/10.1103/PhysRevB.101.214440

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Dion M. F. Hartmann1,*, Andreas Rückriegel1, and Rembert A. Duine1,2

  • 1Institute for Theoretical Physics, Utrecht University, Leuvenlaan 4, NL-3584 CE Utrecht, The Netherlands
  • 2Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

  • *d.m.f.hartmann@uu.nl

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Issue

Vol. 101, Iss. 21 — 1 June 2020

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