Abstract
We consider the influence of a spin accumulation in a normal metal on the magnetic statics and dynamics in an adjacent magnetic insulator. In particular, we focus on arbitrary angles between the spin accumulation and the easy axis of the magnetic insulator. Based on Landau-Lifshitz-Gilbert phenomenology supplemented with magnetoelectronic circuit theory, we find that the magnetic texture twists into a stable configuration that turns out to be described by a virtual, or image, domain wall configuration, i.e., a domain wall outside the ferromagnet. We show that even when the spin accumulation is perpendicular to the anisotropy axis, the magnetic texture develops a component parallel to the spin accumulation for sufficiently large spin bias. The emergence of this parallel component gives rise to threshold behavior in the spin Hall magnetoresistance and nonlocal magnon transport. This threshold can be used to design novel spintronic and magnonic devices that can be operated without external magnetic fields.
- Received 13 March 2020
- Revised 30 May 2020
- Accepted 2 June 2020
DOI:https://doi.org/10.1103/PhysRevB.101.214440
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