Phase diagrams and electronic properties of B-S and H-B-S systems under high pressure

Xin Du, Shoutao Zhang, Jianyan Lin, Xiaohua Zhang, Aitor Bergara, and Guochun Yang
Phys. Rev. B 100, 134110 – Published 29 October 2019
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Abstract

Pressure has become an effective way to obtain new materials with desirable properties. Considering the various stoichiometries, wide applications, and unique structures of binary H-S, H-B, and B-S compounds, especially at high pressures, it is worth expecting that they might form ternary compounds with interesting properties as well. Here, phase stabilities of H-B-S ternary compounds, in the pressure range from 0 to 200 GPa, are reliably determined through first-principles unbiased structural search calculations. A hitherto unknown orthorhombic HBS compound with Ama2 symmetry is identified to be stable above 25 GPa, in which B and S atoms alternate to form distorted chains and H atoms are covalently bonded with Bs. With pressure, Ama2 HBS undergoes a semiconductor-to-metal electronic transition and even becomes superconducting. The exploration of the binary B-S phase diagram indicates that B-S compounds tend to decompose into elemental solids above 208 GPa. However, two S-rich phases, B2S3 and BS2, are predicted at low pressures, exhibiting semiconducting and metallic properties, respectively. BS2 shows a calculated Tc value of 21.9 K at 200 GPa, becoming a superconductor among bulk binary B-S compounds.

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  • Received 15 July 2019
  • Revised 4 October 2019

DOI:https://doi.org/10.1103/PhysRevB.100.134110

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xin Du1, Shoutao Zhang1, Jianyan Lin1, Xiaohua Zhang1, Aitor Bergara2,3,4,*, and Guochun Yang1,†

  • 1Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Northeast Normal University, Changchun 130024, China
  • 2Departamento de Física de la Materia Condensada, Universidad del País Vasco-Euskal Herriko Unibertsitatea, UPV/EHU, 48080 Bilbao, Spain
  • 3Donostia International Physics Center (DIPC), 20018 Donostia, Spain
  • 4Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain

  • *Corresponding author: a.bergara@ehu.eus
  • Corresponding author: yanggc468@nenu.edu.cn

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Issue

Vol. 100, Iss. 13 — 1 October 2019

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