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Title:	Photoluminescence and free carrier interactions in erbium-doped GaAs
Source:	Journal of Applied Physics [0021-8979] Culp, T D yr:1998

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description	1.	Cederberg, J. "Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium." Journal of applied physics 85.3 (1999): 1825-1831.
description	2.	BOGARDUS, E. "BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS." Physical review 176.3 (1968): 993-1002.
description	3.	Topper, K. "Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments." Applied physics letters 71.4 (1997): 482-484.
description	4.	GILLEO, MA. "FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS." Physical review 174.3 (1968): 898-905.
description	5.	STRAUSS, U. "AUGER RECOMBINATION IN INTRINSIC GAAS." Applied physics letters 62.1 (1993): 55-57.
description	6.	Gilliland, G. "Photoluminescence spectroscopy of crystalline semiconductors." Materials science & engineering. R, Reports 18.3-6 (1997): 99-399.
description	7.	Paivasaari, J. "Atomic layer deposition of rare earth oxides." Topics in applied physics 106.Rare Earth Oxide Thin Films (2007): 15-32.
description	8.	Yoffe, A. "Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems." Advances in physics 50.1 (2001): 1-208.
description	9.	Efros, A. "The electronic structure of semiconductor nanocrystals." Annual review of materials science 30.1 (2000): 475-521.
description	10.	Yoffe, A. "LOW-DIMENSIONAL SYSTEMS - QUANTUM-SIZE EFFECTS AND ELECTRONIC-PROPERTIES OF SEMICONDUCTOR MICROCRYSTALLITES (ZERO-DIMENSIONAL SYSTEMS) AND SOME QUASI-2-DIMENSIONAL SYSTEMS." Advances in physics 51.2 (1993): 173-226.
description	11.	Wahl, M. "Time-resolved photoluminescence characterizes semiconductors." Laser Focus World 36.7 (2000): -18.
description	12.	Ferguson, John D. "Particle atomic layer deposition. Tailoring particle surface chemistry with atomic precision." Advanced Packaging 16.1 (2007): 30-.
description	13.	Ledentsov, N.N. N. "Quantum dot heterostructures: fabrication, properties, lasers (Review)." Semiconductors 32.4 (1998): 343-365.
description	14.	Scholes, Gregory D. "Excitons in nanoscale systems." Nature materials 5.9 (2006): 683-696.
description	15.	Trindade, T. "Nanocrystalline semiconductors: Synthesis, properties, and perspectives." Chemistry of materials 13.11 (2001): 3843-3858.
description	16.	Köhler, K. "Comparison of Si δ-doping with homogeneous doping in GaAs." Journal of Crystal Growth 127.1-4 (1993): 720-.
description	17.	HAUG, A. "CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION." Solid-state electronics 21.11-1 (1978): 1281-1284.
description	18.	Bassani, F. "Luminescence characterization of CdTe: In grown by molecular beam epitaxy." Applied physics letters 58.23 (1991): 2651-.
description	19.	MITTLEMAN, SD. "ELECTRICAL-PROPERTIES OF CADMIUM AND ZINC DOPED CUINS2." Solid state communications 22.10 (1977): 659-662.
description	20.	LEITE, RCC C. "EFFECT OF ELECTRON-EXCITON COLLISIONS ON FREE-EXCITON LINEWIDTH IN EPITAXIAL GAAS." Physical review letters 23.23 (1969): 1332-.