Language
English
German
^M
Dutch
Spanish
Title:
Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon
Source:
Journal of Applied Physics [0021-8979] Wilking, S yr:2013
Basic
Sorry, no full text available...
Please use the document delivery service (see below)
Holding information
Holdings in library search engine
ALBERT
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Yli Koski, M.
"Light activated copper defects in P-type silicon studied by PCD."
Physica scripta. T
T114 (2004): 69-72.
description
2.
Yli Koski, M.
"Detection of low-level copper contamination in p-type silicon by means of microwave photoconductive decay measurements."
Journal of physics. Condensed matter
14.48 (2002): 13119-13125.
Select All
Clear All
Save Citations
Select Format
RefWorks
EndNote
ProCite
Reference Manager
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
author:
Wilking, S
Ebert, S
Herguth, A
Hahn, G
last name
initials
Other articles by this author? -- in
Online Contents Geosciences
author:
Wilking, S
Ebert, S
Herguth, A
Hahn, G
last name
initials
Other articles by this author? -- using
Web of Science
author:
Wilking, S
Ebert, S
Herguth, A
Hahn, G
last name
initials
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.