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Title:
Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation
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Journal of Applied Physics [0021-8979] Zhang, X yr:2018
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Continued in part by: Applied Physics Reviews [1931-9401]
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Zhang, X
Connelly, D
Takeuchi, H
Hytha, M
Mears, R J
Rubin, L M
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Zhang, X
Connelly, D
Takeuchi, H
Hytha, M
Mears, R J
Rubin, L M
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Zhang, X
Connelly, D
Takeuchi, H
Hytha, M
Mears, R J
Rubin, L M
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