ExLibris header image
SFX Logo
Title: InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers
Source:

Journal of Applied Physics [0021-8979] Blake, Adam yr:2012


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Vanderburg, A. "Measurements of Electrical Specific Action to Melt for Brass and Aluminum Alloys." IEEE Transactions on Plasma Science 41.8 (2013): 2427-2433. Link to Full Text for this item Link to SFX for this item
2. Castrodeza, Enrique M. "Processing of brass open-cell foam by silica-gel beads replication." Journal of materials processing technology 209.11 (2009): 4958-4962. Link to SFX for this item
3. TIMSIT, R. "ELECTRICAL INSTABILITIES IN STATIONARY CONTACTS - AL-PLATED-BRASS JUNCTIONS." IEEE transactions on components, hybrids, and manufacturing technology 11.1 (1988): 43-53. Link to SFX for this item
4. Zhou, Y. "Weldability of thin sheet metals during small-scale resistance spot welding using an alternating-current power supply." Journal of electronic materials 29.9 (2000): 1090-1099. Link to Full Text for this item Link to SFX for this item
5. Kardashev, B K. "Young’s modulus and internal friction in porous biocarbon white pine wood precursors." Physics of the solid state 51.12 (2009): 2463-2468. Link to Full Text for this item Link to SFX for this item
6. V, P. "Nanocomposites for high temperature applications." Materials science & engineering. A, Structural materials 204.s 1-2 (1995): 125-134. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.