Language
English
German
^M
Dutch
Spanish
Title:
Passivation and activation of Mg acceptors in heavily doped GaN
Source:
Journal of Applied Physics [0021-8979] Zvanut, M E yr:2011
Basic
Sorry, no full text available...
Please use the document delivery service (see below)
Holding information
Holdings in library search engine
ALBERT
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Bhattacharyya, A.
"Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy."
Applied physics letters
85.21 (2004): 4956-4958.
description
2.
Lieten, G R.
"Mg Doping of GaN by Molecular beam Epitaxy."
Journal of physics. D, Applied physics
44.13 (2011): 135406-135406.
description
3.
Billingsley, D.
"High-Temperature Growth of GaN and AlxGa1-xN via Ammonia-Based Metalorganic Molecular-Beam Epitaxy."
Journal of Electronic Materials
39.5 (2010): 473-7.
description
4.
Honsberg, C.
"GaN betavoltaic energy converters."
Conference Record of the IEEE Photovoltaic Specialists Conference
31 (2005): 102-105.
description
5.
Glaser, E.
"Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy."
Physica. B, Condensed matter
401 (2007): 327-330.
description
6.
Billingsley, D.
"Growth kinetics of AlxGa1-xN grown via ammonia-based metal-organic molecular beam epitaxy."
Journal of Crystal Growth
312.2 (2010): 209-212.
description
7.
Zhang, M.
"Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions."
Applied physics letters
96.13 (2010): 132103-132103.
description
8.
McLaurin, M.
"Growth of p-type and n-type m-plane GaN by molecular beam epitaxy."
Journal of applied physics
100.6 (2006): 63707-1.
description
9.
Yokoyama, M.
"Growth and characterization of ZnSe on Si by atomic layer epitaxy."
Journal of Crystal Growth
212.1 (2000): 97-102.
description
10.
Chen, X.
"MBE growth and characterization of Mg-doped III-nitrides on sapphire."
International journal of high speed electronics and systems
19.1 (2009): 113-19.
description
11.
Billingsley, D.
"Investigation into the use of molecular hydrogen on the growth of gallium nitride via metal-organic molecular beam epitaxy."
Physica status solidi. C, Conferences and critical reviews
5.6 (2008): 1723-5.
description
12.
Fabien, C.A.M., M.
"Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells."
IEEE Journal of Photovoltaics
4.2 (2014): 601-606.
description
13.
Wang, G.
"The effect of temperature changes on electrical performance of the betavoltaic cell."
Applied radiation and isotopes
68.12 (2010): 2214-2217.
description
14.
Yamaguchi, S.
"Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy."
Journal of Crystal Growth
248 (2003): 503-6.
description
15.
Ferguson, I.
"Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes."
Applied physics express
3.2 (2010): 22101-22101.
description
16.
Gon, N.
"Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy."
Applied physics letters
77.26 (2000): 4386-8.
description
17.
K., K.
"Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE."
Journal of Crystal Growth
312.2 (2010): 231-237.
description
18.
Nikishin, S.
"Mechanism of carrier injection in (Ni/Au)/p-AlxGa1-xN:MgO(0 <= X < 0.1) Ohmic contacts."
Applied physics letters
95.16 (2009): 163502-163502.
description
19.
Li, X.
"Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs."
Superlattices and Microstructures
2010. 118-122.
description
20.
Chye, Y.
"Molecular beam epitaxy of YMnO3 on c-plane GaN."
Applied physics letters
88.13 (2006): 132903-1.
View More...
View Less...
Select All
Clear All
Save Citations
Select Format
EndNote
RefWorks
Reference Manager
ProCite
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
author:
Zvanut, M E
Uprety, Y
Dashdorj, J
Moseley, M
Doolittle, W A
last name
initials
Other articles by this author? -- in
Online Contents Geosciences
author:
Zvanut, M E
Uprety, Y
Dashdorj, J
Moseley, M
Doolittle, W A
last name
initials
Other articles by this author? -- using
Web of Science
author:
Zvanut, M E
Uprety, Y
Dashdorj, J
Moseley, M
Doolittle, W A
last name
initials
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.