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Title:
Analysis of electron traps at the 4H–SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
Source:
Journal of Applied Physics [0021-8979] Pintilie, I yr:2010
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author:
Pintilie, I
Teodorescu, C M
Moscatelli, F
Nipoti, R
Poggi, A
Solmi, S
Løvlie, L S
Svensson, B G
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author:
Pintilie, I
Teodorescu, C M
Moscatelli, F
Nipoti, R
Poggi, A
Solmi, S
Løvlie, L S
Svensson, B G
last name
initials
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author:
Pintilie, I
Teodorescu, C M
Moscatelli, F
Nipoti, R
Poggi, A
Solmi, S
Løvlie, L S
Svensson, B G
last name
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