SFX by Ex Libris Inc.

Title:	Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide
Source:	Journal of Applied Physics [0021-8979] Maeng, W J yr:2010

Basic

Sorry, no full text available...

Please use the document delivery service (see below)

Holding information

Holdings in library search engine ALBERT

Document delivery

Request document via Library/Bibliothek

Users interested in this article also expressed an interest in the following:
description	1.	Auciello, O. "Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al2O3/TiO2 nanolaminates synthesized by atomic layer deposition." Applied physics letters 96.16 (2010): 162907-.
description	2.	Gonon, P. "Resistance switching in HfO2 metal-insulator-metal devices." Journal of applied physics 107.7 (2010): 74507-.
description	3.	Roeckerath, M. "Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon." Applied physics. A, Materials science & processing 94.3 (2009): 521-524.
description	4.	Auciello, O. "Controllable giant dielectric constant in AlO(x)/TiO(y) nanolaminates." Journal of applied physics 110.2 (2011): 24106-.
description	5.	Hudec, B. "High-permittivity metal-insulator-metal capacitors with TiO2 rutile dielectric and RuO2 bottom electrode." IOP Conference Series: Materials Science and Engineering 8 (2010): 12024-.
description	6.	Wu, Y. "Al2O3-Based RRAM Using Atomic Layer Deposition (ALD) With 1-mu A RESET Current." IEEE electron device letters 31.12 (2010): 1449-1451.
description	7.	Sperling, B. "Reflection absorption infrared spectroscopy during atomic layer deposition of HfO2 films from tetrakis(ethylmethylamido)hafnium and water." Applied surface science 256.16 (2010): 5035-5041.
description	8.	Mack, J. "Design of an atomic layer deposition reactor for hydrogen sulfide compatibility." Review of scientific instruments 81.4 (2010): 44102-.
description	9.	Ozben, E D. "SmScO3 thin films as an alternative gate dielectric." Applied physics letters 93.5 (2008): 52902-.
description	10.	Manna, S. "Giant dielectric permittivity observed in Li and Zr co-doped NiO." Solid State Communications 150.9-10 (2010): 399-404.
description	11.	CIVALE, L. "DEFECT INDEPENDENCE OF THE IRREVERSIBILITY LINE IN PROTON-IRRADIATED Y-BA-CU-O CRYSTALS." Physical review letters 65.9 (1990): 1164-1167.
description	12.	Wong, H.-S.P. P. "Beyond the conventional transistor." IBM journal of research and development 46.2-3 (2002): 133-168.
description	13.	Storey, B G. "TEM imaging of clustered Au substitutional impurities in YBa2Cu3O6.9." Physica. C, Superconductivity 246.1-2 (1995): 46-54.
description	14.	Kirk, M A. "Defect structures preceding amorphization by ion irradiations in YBa2Cu3O7-†." Physica. C, Superconductivity 162-164.PART 1 (1989): 532-533.
description	15.	Lee, G. "Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices." Journal of applied physics 114.2 (2013): 27001-27001.
description	16.	Golden, William G. "The infrared spectrum of adsorbed carbon monoxide on a platinum surface in the presence of high pressure gas-phase carbon monoxide." Journal of physical chemistry 82.7 (1978): 843-844.
description	17.	Mu, J. "Dislocation-mediated creep process in nanocrystalline Cu." Chinese physics B 22.3 (2013): 37303-.
description	18.	Chen, Y. "An Ultrathin Forming-Free HfOx Resistance Memory With Excellent Electrical Performance." IEEE electron device letters 31.12 (2010): 1473-1475.
description	19.	Kim, S. "Relation Between Enhancement in Growth and Thickness-Dependent Crystallization in ALD TiO2 Thin Films." Journal of the Electrochemical Society 158.1 (2011).
description	20.	Yu, S. "A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM." IEEE electron device letters 31.12 (2010): 1455-1457.