ExLibris header image
SFX Logo
Title: Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation
Source:

Journal of Applied Physics [0021-8979] Nobili, D yr:2004


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Solmi, S. "Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si." Applied physics letters 80.25 (2002): 4774-4776. Link to Full Text for this item Link to SFX for this item
2. Nobili, D. "Clustering equilibrium and deactivation kinetics in arsenic doped silicon." Journal of applied physics 90.1 (2001): 101-107. Link to SFX for this item
3. Solmi, S. "Effects of donor concentration on transient enhanced diffusion of boron in silicon." Journal of applied physics 87.8 (2000): 3696-9. Link to SFX for this item
4. Uematsu, M. "Transient enhanced diffusion and deactivation of high-dose implanted arsenic in silicon." Japanese journal of applied physics. Part 1, Regular papers & short notes 39.3A (2000): 1006-1012. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.