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Title:
Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy
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Journal of Applied Physics [0021-8979] Vogt, A yr:1998
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author:
Vogt, A
Simon, A
Hartnagel, H L
Schikora, J
Buschmann, V
Rodewald, M
Fuess, H
Fascko, S
Koerdt, C
Kurz, H
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author:
Vogt, A
Simon, A
Hartnagel, H L
Schikora, J
Buschmann, V
Rodewald, M
Fuess, H
Fascko, S
Koerdt, C
Kurz, H
last name
initials
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author:
Vogt, A
Simon, A
Hartnagel, H L
Schikora, J
Buschmann, V
Rodewald, M
Fuess, H
Fascko, S
Koerdt, C
Kurz, H
last name
initials
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