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Title:
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
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Applied Physics Letters [0003-6951] Sasikumar, A yr:2013
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author:
Sasikumar, A
Arehart, A R
Martin Horcajo, S
Romero, M F
Pei, Y
Brown, D
Recht, F
di Forte-Poisson, M A
Calle, F
Tadjer, M J
Keller, S
DenBaars, S P
Mishra, U K
Ringel, S A
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initials
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author:
Sasikumar, A
Arehart, A R
Martin Horcajo, S
Romero, M F
Pei, Y
Brown, D
Recht, F
di Forte-Poisson, M A
Calle, F
Tadjer, M J
Keller, S
DenBaars, S P
Mishra, U K
Ringel, S A
last name
initials
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author:
Sasikumar, A
Arehart, A R
Martin Horcajo, S
Romero, M F
Pei, Y
Brown, D
Recht, F
di Forte-Poisson, M A
Calle, F
Tadjer, M J
Keller, S
DenBaars, S P
Mishra, U K
Ringel, S A
last name
initials
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