ExLibris header image
SFX Logo
Title: Tri-carbon defects in carbon doped GaN
Source:

Applied Physics Letters [0003-6951] Irmscher, K yr:2018


Collapse list of basic services Basic
Full text
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Shi, Y. "Property manipulation through pulsed laser annealing in high dose Mg-implanted GaN." Journal of Applied Physics 128.23 (2020): 235704-. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced