SFX by Ex Libris Inc.

Title:	High-transparency Ni/Au ohmic contact to p-type GaN
Source:	Applied Physics Letters [0003-6951] Sheu, J K yr:1999

Basic

Full text

Full text available via AIP Journals (American Institute of Physics)

Year:

Volume:

Issue:

Start Page:

Document delivery

Request document via Library/Bibliothek

Users interested in this article also expressed an interest in the following:
description	1.	Ho, J. "Low-resistance ohmic contacts to p-type GaN." Applied physics letters 74.9 (1999): 1275-1277.
description	2.	Hibbard, D. "Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag." Applied physics letters 83.2 (2003): 311-13.
description	3.	Chou, C. H. H. "High thermally stable Ni/Ag(Al) alloy contacts on p-GaN." Applied physics letters 90.2 (2007): 22103-1.
description	4.	Wang, T. "Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells." Applied physics letters 73.24 (1998): 3571-3.
description	5.	Fujii, T. "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening." Applied physics letters 84.6 (2004): 855-857.
description	6.	Qiao, D. "A study of the Au/Ni ohmic contact on p-GaN." Journal of applied physics 88.7 (2000): 4196-4200.
description	7.	Gao, Y. "Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching." Japanese journal of applied physics 43.5A (2004): 637-9.
description	8.	Ho, J.-K. K. "Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films." Journal of applied physics 86.8 (1999): 4491-4497.
description	9.	Chang, I. "Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN." Applied physics letters 74.1 (1999): 70-72.
description	10.	Chae, S. "Al-based Ohmic reflectors with low leakage currents and high reflectance for p-GaN flip-chip processes." Applied physics letters 90.20 (2007): 201113-.
description	11.	Halpin-Healy, T. "Kinetic roughening phenomena, stochastic growth, directed polymers and all that. Aspects of multidisciplinary statistical mechanics." Physics Reports 254.4-6 (1995): 215-415.
description	12.	Krames, M. "Status and future of high-power light-emitting diodes for solid-state lighting." Journal of display technology 3.2 (2007): 160-175.
description	13.	Koide, Y. "Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN." Journal of electronic materials 28.3 (1999): 341-346.
description	14.	Newman, Christopher R. "Introduction to Organic Thin Film Transistors and Design of n-Channel Organic Semiconductors." Chemistry of materials 16.23: 4436-4451.
description	15.	Pan, C. "Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes." Applied physics letters 84.25 (2004): 5249-5251.
description	16.	Song, J. "Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes." Physica status solidi. A, Applied research 201.12 (2004): 2823-2826.
description	17.	Lewis, L. "On the specific contact resistance of metal contacts to p-type GaN." Semiconductor Science and Technology 21.12 (2006): 1738-1742.
description	18.	Song, JO. "Highly transparent Ag/SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes." Applied physics letters 85.26 (2004): 6374-6376.
description	19.	Cao, X A. "Effects of interfacial oxides on Schottky barrier contacts to n-and p-type GaN." Applied physics letters 75.26 (1999): 4130-4132.
description	20.	Yam, F. "InGaN: An overview of the growth kinetics, physical properties and emission mechanisms." Superlattices and Microstructures 43.1 (2008): 1-23.