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Title:	Triaxial stress distributions in Cu/low-k interconnect features
Source:	Applied Physics Letters [0003-6951] Murray, Conal yr:2011

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description	6.	Tajima, N. "Molecular modeling of low-k films of carbon-doped silicon oxides for theoretical investigations of the mechanical and dielectric properties." Applied physics letters 89.6 (2006): 61907-1.
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description	9.	Kuroki. "A novel photosensitive porous low-k interlayer dielectric film." Japanese journal of applied physics 43.4B (2004): 1820-4.
description	10.	Degryse, D. "FEM study of deformation and stresses in copper wire bonds on Cu lowK structures during processing." 2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546) 2004. 906-912.
description	11.	Milor, L. "Modeling Low-K Dielectric Breakdown in the Presence of Multiple Feature Geometries and Die-to-Die Linewidth Variation." IEEE design and test (2013): 1-1.
description	12.	Frot, T J. "Investigation of plasma etch damage to porous oxycarbosilane ultra low-k dielectric." Journal of physics. D, Applied physics 46.26 (2013): 265303-265303.
description	13.	Murray. "Manipulating stress in Cu/low-k dielectric nanocomposites." Applied physics letters 98 (2011): 141916-.
description	14.	Marsik, P. "Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance." Thin solid films 519.11 (2011): 3619-3626.
description	15.	Rao, Vempati S. "Design and Development of Fine Pitch Copper/Low-K Wafer Level Package." IEEE transactions on advanced packaging 33.2 (2010): 377-388.
description	16.	Postava, K. "Optical functions of low-k materials for interlayer dielectrics." Journal of applied physics 89.4 (2001): 2189-2193.
description	17.	Woei, C. "Effects of annealing temperature on ultra-low dielectric constant SiO2 thin films derived from sol-gel spin-on-coating." Physica. B, Condensed matter 403.4 (2008): 611-15.
description	18.	Cheng, YL L. "Extraction of effective dielectric constants and the effect of process damage of low-k dielectrics for advanced interconnects." Thin solid films 515.3 (2006): 1203-1205.
description	19.	Hartfield, C. "Interface reliability assessments for copper/low-k products." IEEE transactions on device and materials reliability 4.2 (2004): 129-141.
description	20.	Treichel, H. "Low dielectric constant materials." Journal of Electronic Materials 30.4 (2001): 290-8.