SFX by Ex Libris Inc.

Title:	Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodes
Source:	Applied Physics Letters [0003-6951] Saitoh, Tadashi yr:2003

Basic

Full text

Full text available via AIP Journals (American Institute of Physics)

Year:

Volume:

Issue:

Start Page:

Document delivery

Request document via Library/Bibliothek

Users interested in this article also expressed an interest in the following:
description	1.	Li, X. "A novel planar waveguide wavelength demultiplexer design for integrated optical triplexer transceiver." IEEE photonics technology letters 17.6 (2005): 1214-1216.
description	2.	Mahnkopf, S. "Tunable distributed feedback laser with photonic crystal mirrors." Applied physics letters 82.18 (2003): 2942-2944.
description	3.	Marinelli, C. "Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes." Applied physics letters 79.25 (2001): 4076-4076.
description	4.	Klehr, A. "High-Power Pulse Generation in GHz Range With 1064-nm DBR Tapered Laser." IEEE photonics technology letters 22.11 (2010): 832-834.
description	5.	Zhou, G. "Design of deeply etched antireflective waveguide terminators." IEEE journal of quantum electronics 39.2 (2003): 384-391.
description	6.	Abdullah, R. "InGaN MQW violet laser diode performance with quaternary AlInGaN blocking layer." Optics Communications 282.24 (2009): 4755-4758.
description	7.	Pezeshki, B. "12 nm tunable WDM source using an integrated laser array." Electronics letters 36.9 (2000): 788-789.
description	8.	Bewley, W. "Mid-infrared photonic-crystal distributed-feedback laser with enhanced spectral purity and beam quality." Applied physics letters 79.20 (2001): 3221-3223.
description	9.	Houle, T.J. J. "Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-mu m AlGaInAs MQW lasers." IEEE journal of quantum electronics 41.2 (2005): 132-139.
description	10.	Takemasa, K. "1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter." IEEE Photonics Technology Letters 12.5 (2000): 471-473.
description	11.	Vurgaftman, I. "Mid-infrared photonic-crystal distributed-feedback lasers." Solid-state electronics 46.10 (2002): 1557-1566.
description	12.	Tsutsumi, N. "Organic dye lasers with distributed Bragg reflector grating and distributed feedback resonator." Optics express 17.24 (2009): 21698-21703.
description	13.	Luo, Z. "Large positive and negative lateral beam displacement in a guided-mode resonant filter." Journal of optics. A, Pure and applied optics 10.11 (2008).
description	14.	Zhang, M. "Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes." Applied physics letters 95.20 (2009): 201108-201108.
description	15.	Masanovic, M L. "Widely tunable monolithically integrated all-optical wavelength converters in InP." Journal of lightwave technology 23.3 (2005): 1350-.
description	16.	Yen, S. "Polarization-dependent optical characteristics of violet InGaN laser diodes." Journal of applied physics 103.10 (2008): 103115-1.
description	17.	Karbownik, P. "Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers." Opto-electronics review 16.1 (2008): 27-33.
description	18.	Novikov, I. "Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers." Semiconductors 39.4 (2005): 481-4.
description	19.	Ivanov, P. "Theoretical investigation of transverse optical modes in photonic-crystal waveguides imbedded into proton-implanted and oxide-confined vertical-cavity surface-emitting lasers." Journal of the Optical Society of America. B, Optical physics 22.10 (2005): 2270-2276.
description	20.	Zhang, W. "Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers." Chinese Physics Letters 20.8 (2003): 1261-1263.