SFX by Ex Libris Inc.

Title:	Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
Source:	Applied Physics Letters [0003-6951] Wang, T yr:2000

Basic

Full text

Full text available via AIP Journals (American Institute of Physics)

Year:

Volume:

Issue:

Start Page:

Document delivery

Request document via Library/Bibliothek

Users interested in this article also expressed an interest in the following:
description	1.	Studenikin, Michael A. "Time-resolved luminescence and photoconductivity of polycrystalline ZnO films." Journal of applied physics 91.8 (2002): 5060-5065.
description	2.	Kim, M. "Origin of efficiency droop in GaN-based light-emitting diodes." Applied physics letters 91.18 (2007): 183507-1.
description	3.	Pavesi, M. "A new approach to correlate transport processes and optical efficiency in GaN-based LEDs." Journal of physics. D, Applied physics 42.4 (2009): 45110-45110.
description	4.	Skierbiszewski, C. "60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy." Applied physics letters 88.22 (2006): 221108-.
description	5.	Taniyasu, Y. "An aluminium nitride light-emitting diode with a wavelength of 210 nanometres." Nature 441.7091 (2006): 325-328.
description	6.	Schubert, M. "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop." Applied physics letters 93.4 (2008): 41102-.
description	7.	Li, Y. "Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness." Applied physics letters 91.18 (2007): 181113-1.
description	8.	Studenikin, Nickolay A. "Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films." Journal of applied physics 87.5 (2000): 2413-2421.
description	9.	Zhao, D W. "Use of multiple layers to adjust energy transfer for raising intensity of photoluminescence." Journal of physics. D, Applied physics 40.7 (2007): 1915-1918.
description	10.	Liu, Y. "Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy." Applied physics letters 88.22 (2006): 221916-.
description	11.	Narukawa, A. "Efficient green emission from (11(2)over-bar2) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy." Applied physics letters 90.26 (2007): 261912-.
description	12.	Monemar, B. "Perspective on the development of III-nitrides for optical emitters." Materials science forum 590 (2008): 17-26.
description	13.	Yao, J. "Resonant Tunnelling in Barrier-in-Well and Well-in-Well Structures." Chinese Physics Letters 25.12 (2008): 4391-4394.
description	14.	Jiang, D. "Cathodoluminescence study of GaN-based film structures." Journal of materials science. Materials in electronics 19 (2008): 58-.
description	15.	Yan, Y. H. "Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates." Applied physics letters 94.4 (2009): 41117-.
description	16.	Cheung, M. "Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures." Applied physics letters 92.3 (2008): 32106-3.
description	17.	Xiong, G. "Donor-acceptor pair luminescence of nitrogen-implanted ZnO single crystal." Journal of applied physics 97.4 (2005): 43528-4.
description	18.	Luo, Hongmei M. "Electrochemical deposition of mesoporous crystalline oxide semiconductor films from lyotropic liquid crystalline phases." Chemistry of materials 15.20 (2003): 3769-3773.
description	19.	Xiong, C. "The characteristics of GaN-based blue LED on Si substrate." Journal of luminescence 122 (2007): 185-187.
description	20.	NAKAMURA, S. "HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES." Japanese journal of applied physics. Part 1, Regular papers & short notes 30.12A (1991): -2001.