Language
English
German
^M
Dutch
Spanish
Title:
Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
Source:
Applied Physics Letters [0003-6951] Hearne, S J yr:2000
Basic
Full text
Full text available via
AIP Journals (American Institute of Physics)
Year:
Volume:
Issue:
Start Page:
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Koley, G.
"On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface."
Applied physics letters
86.4 (2005): 42107-1.
description
2.
Dycus, Kelsey H.
"Structure of Ultrathin Native Oxides on III–Nitride Surfaces."
ACS applied materials & interfaces.
10.13: 10607-10611.
description
3.
Cha, H.-Y. Y.
"Gallium nitride nanowire nonvolatile memory device."
Journal of applied physics
100.2 (2006): 24307-.
description
4.
Faqir, M.
"Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs."
Microelectronics and reliability
47.9-11 (2007): 1639-1642.
description
5.
Karrer, U.
"Influence of crystal polarity on the properties of Pt/GaN Schottky diodes."
Applied physics letters
77.13 (2000): 2012-2014.
description
6.
Hasegawa, H.
"Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors."
Journal of vacuum science & technology. B, Microelectronics processing and phenomena
21.4 (2003): 1844-1855.
description
7.
Goyal, N.
"Determination of Surface Donor States Properties and Modeling of InAlN/AlN/GaN Heterostructures."
IEEE Transactions on Electron Devices
63.2 (2016): 881-885.
description
8.
"Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces."
Applied physics letters
112.9: 92903-.
description
9.
Kuball, M.
"AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes."
Microelectronics and reliability
51.2 (2011): 195-200.
description
10.
Hashizume, T.
"Near-midgap deep levels in Al(0.26)Ga(0.74)N grown by metal-organic chemical vapor deposition."
Applied physics letters
94.15 (2009): 152106-.
description
11.
Huh, C.
"Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes."
Applied physics letters
78.12 (2001): 1766-8.
description
12.
Faqir, M.
"Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors."
IEEE transactions on device and materials reliability
8.2 (2008): 240-7.
description
13.
Heikman, S.
"Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures."
Journal of applied physics
93.12 (2003): 10114-10118.
description
14.
Saxena, A.N. N.
"Forward current-voltage characteristics of Schottky barriers on n-type silicon."
Surface science
13.1 (1969): 151-171.
description
15.
Kalinin, S.
"Polarization Control of Electron Tunneling into Ferroelectric Surfaces."
Science
324.5933 (2009): 1421-1425.
description
16.
Frank, A.
"Detonations of gallium azides: A simple route to hexagonal GaN nanocrystals."
Journal of the American Chemical Society
120.14 (1998): 3512-3513.
description
17.
Riedl, C.
"Precise in situ thickness analysis of epitaxial graphene layers on SiC (0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy."
Applied physics letters
93.3 (2008): 33106-33106.
description
18.
Kang, J. M.
"Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates."
Japanese journal of applied physics.
46.9B (2007): 6227-6229.
description
19.
Talin, A.
"Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires."
Applied physics letters
92.9 (2008): 93105-.
description
20.
Mizutani, T.
"A study on current collapse in AlGaN/GaN HEMTs induced by bias stress."
IEEE transactions on electron devices
50.10 (2003): 2015-2020.
View More...
View Less...
Select All
Clear All
Save Citations
Select Format
Reference Manager
ProCite
RefWorks
EndNote
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
author:
Hearne, S J
Han, J
Lee, S R
Floro, J A
Follstaedt, D M
Chason, E
last name
initials
Other articles by this author? -- in
Online Contents Geosciences
author:
Hearne, S J
Han, J
Lee, S R
Floro, J A
Follstaedt, D M
Chason, E
last name
initials
Other articles by this author? -- using
Web of Science
author:
Hearne, S J
Han, J
Lee, S R
Floro, J A
Follstaedt, D M
Chason, E
last name
initials
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.