ExLibris header image
SFX Logo
Title: Reactive ion etch process with highly controllable GaAs‐to‐AlGaAs selectivity using SF6and SiCl4
Source:

Applied Physics Letters [0003-6951] Salimian, S yr:1987


Collapse list of basic services Basic
Full text
Full text available via AIP Digital Archive
GO
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Suh, K. "Fluoridation of GaAs surface in a remote SF6 plasma." Japanese journal of applied physics 35.8A (1996). Link to SFX for this item
2. PEARTON, S. "REACTIVE ION ETCHING OF GAAS, ALGAAS, AND GASB IN CL2 AND SICL4." Journal of vacuum science & technology. B, Microelectronics and nanometer structures 8.4 (1990): 607-617. Link to SFX for this item
3. Engelmann, Sebastian U. "Plasma processing of III-V materials for energy efficient electronics applications." Proceedings of SPIE--the international society for optical engineering 10149.1 (2017): 101490-. Link to SFX for this item
4. Cho, J. "Doping of GaAs using SF6plasma treatment." Journal of applied physics 74.12 (1993): 7315-7320. Link to Full Text for this item Link to SFX for this item
5. WILLIAMS, R. "EPITAXIAL RARE-EARTH FLUORIDE INSULATING LAYERS ON SEMICONDUCTORS - STRUCTURE, PHASE-TRANSITIONS, AND INTERFACE REACTIONS." Journal of vacuum science & technology. B, Microelectronics and nanometer structures 1993. 1541-1545. Link to SFX for this item
6. Murad, S. "Dry etching damage in III-V semiconductors." Journal of vacuum science & technology. B, Microelectronics and nanometer structures 14.6 (1996): 3658-3662. Link to SFX for this item
7. HU, E. "REACTIVE ION ETCHING OF GAAS IN A CHLORINE PLASMA." Journal of vacuum science & technology. B, Microelectronics and nanometer structures 2.1 (1984): 85-88. Link to SFX for this item
8. Khanna, R. "Reduction of dry etch damage to GaAs using pulse-time modulated plasmas." Electrochemical and solid-state letters 10.5 (2007): 139-141. Link to SFX for this item
9. AGOSTINELLI, S. "EPITAXIAL-GROWTH OF OXIDES ON SEMICONDUCTORS USING FLUORIDES AS A BUFFER LAYER." Journal of applied physics 74.2 (1993): 1366-1375. Link to Full Text for this item Link to SFX for this item
10. Hong, J. "Plasma chemistries for high density plasma etching of SiC." Journal of Electronic Materials 28.3 (1999): 196-201. Link to Full Text for this item Link to SFX for this item
11. PEARTON, S. "DRY-ETCHING TECHNIQUES AND CHEMISTRIES FOR III-V-SEMICONDUCTORS." Materials science & engineering. B, Solid-state materials for advanced technology 10.3 (1991): 187-196. Link to SFX for this item
12. Wolter, S. "X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride." Applied physics letters 70.16 (1997): 2156-2158. Link to Full Text for this item Link to SFX for this item
13. Clawson, A.R. R. "Guide to references on III-V semiconductor chemical etching." Materials science & engineering. R, Reports 31.1-6 (2001): 1-438. Link to SFX for this item
14. Du, Yongjuan J. "Atomic force microscopy study of NaOH corroded Al2O3-TiO2-SiO2 coatings on glass." Journal of sol-gel science and technology 13.1-3 (1998): 763-767. Link to Full Text for this item Link to SFX for this item
15. Lin, J. "Smooth and vertical-sidewall InP etching using Cl-2/N-2 inductively coupled plasma." Journal of vacuum science & technology. B, Microelectronics and nanometer structures 22.2 (2004): 510-512. Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.