Language
English
German
^M
Dutch
Spanish
Title:
High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path
Source:
Applied Physics Letters [0003-6951] Liu, Xingqiang yr:2013
Basic
Full text
Full text available via
AIP Journals (American Institute of Physics)
Year:
Volume:
Issue:
Start Page:
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Hanyu, Y.
"Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors."
Applied physics letters
103.20 (2013): 202114-.
description
2.
Chang, T H.
"Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric."
Applied physics letters
102.22 (2013): 221104-.
description
3.
Park, J.
"Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide."
Applied physics letters
101.21 (2012): 212105-.
description
4.
"H 2 O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress."
Applied physics letters
111.7.
description
5.
Liao, C.
"High-Current-Drive Dual-Gate a-IGZO TFT With Nanometer Dotlike Doping."
IEEE Electron Device Letters
34.10 (2013): 1274-1276.
description
6.
Park, S.
"Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors."
Solid-state electronics
75 (2012): 93-96.
description
7.
Nomura, K.
"Defect passivation and homogenization of amorphous oxide thin-film transistor by wet< equation>< font face='verdana'> O</font>< sub> 2</sub></equation> annealing."
Applied physics letters
93.19 (2008): 192107-192107.
description
8.
Tsai, M.
"High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors."
Applied physics letters
103.1 (2013): 12101-.
description
9.
Chen, X.
"Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer."
Applied physics letters
102.19 (2013): 193505-.
description
10.
DEAL, Bruce E.
"STANDARDIZED TERMINOLOGY FOR OXIDE CHARGES ASSOCIATED WITH THERMALLY OXIDIZED SILICON."
Journal of the Electrochemical Society
127.4 (1980): 979-981.
description
11.
Afanas'ev, V. V. V.
"Internal photoemission at interfaces of high-kappa insulators with semiconductors and metals."
Journal of applied physics
102.8 (2007): 81301-81328.
description
12.
Huang, S.
"High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO."
IEEE Electron Device Letters
35.1 (2014): 87-89.
description
13.
Tai, W.
"Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment."
Journal of applied physics
114.20 (2013): 204501-.
description
14.
Lee, G.
"Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors."
Applied physics letters
102.17 (2013): 173502-.
description
15.
Kim, Jun H.
"Hybrid solution processed InGaO3(ZnO)(m) thin films with periodic layered structures and thermoelectric properties."
Journal of materials chemistry
22.32 (2012): 16312-16317.
description
16.
Kwon, S.
"Quantitative Calculation of Oxygen Incorporation in Sputtered IGZO Films and the Impact on Transistor Properties."
Journal of the Electrochemical Society
158.3 (2011).
description
17.
Kang, M.
"Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs."
Microelectronics and reliability
(2012).
description
18.
Li, J.
"SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator."
Current applied physics
12.5 (2012): 1288-1291.
description
19.
Ho Rha, S.
"Vertically integrated submicron amorphous-In 2 Ga 2 ZnO 7 thin film transistor using a low temperature process."
Applied physics letters
100.20 (2012): 203510-.
description
20.
Liu, P.
"Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress."
Applied physics letters
95.23 (2009): 233504-.
View More...
View Less...
Select All
Clear All
Save Citations
Select Format
Reference Manager
ProCite
RefWorks
EndNote
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
author:
Liu, Xingqiang
Wang, Chunlan
Xiao, Xiangheng
Wang, Jingli
Guo, Shishang
Jiang, Changzhong
Yu, Woo J
Hu, Weida
Li, Jinchai
Liao, Lei
last name
initials
Other articles by this author? -- in
Online Contents Geosciences
author:
Liu, Xingqiang
Wang, Chunlan
Xiao, Xiangheng
Wang, Jingli
Guo, Shishang
Jiang, Changzhong
Yu, Woo J
Hu, Weida
Li, Jinchai
Liao, Lei
last name
initials
Other articles by this author? -- using
Web of Science
author:
Liu, Xingqiang
Wang, Chunlan
Xiao, Xiangheng
Wang, Jingli
Guo, Shishang
Jiang, Changzhong
Yu, Woo J
Hu, Weida
Li, Jinchai
Liao, Lei
last name
initials
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.