Abstract
Modulators of terahertz range on the base of silicon integrated p-i-n-structures are investigated theoretically. The generalization of the Fletcher boundary conditions at the injecting contacts has been put forward for the case of highly doped p ++, n ++ regions, where both forbidden gap narrowing and dependence of coefficients of diffusion on doping concentration are taken into account. The problem of double injection into i-region has been simulated in a two-dimensional case. The investigations of modulation properties of integrated p-i-n-structures in the terahertz range have demonstrated a possibility to use these structures up to the frequencies 8 THz.
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Original Russian Text © V.V. Grimalsky, S.V. Koshevaya, M. Tecpoyotl-T., 2010, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2010, Vol. 53, No. 6, pp. 31–39.
Authors would like to thank Professor A. Vertiy for useful discussions. Work was supported by SEP-CONTACyT (Mexico).
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Grimalsky, V.V., Koshevaya, S.V. & Tecpoyotl-T, M. Integrated silicon p-i-n structures with highly doped p ++, n ++ regions for modulation in terahertz frequency band. Radioelectron.Commun.Syst. 53, 309–316 (2010). https://doi.org/10.3103/S073527271006004X
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DOI: https://doi.org/10.3103/S073527271006004X