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Superheterodyne amplification of electromagnetic waves of optical and terahertz bands in gallium nitride films

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Abstract

Superheterodyne amplification of electromagnetic waves of optical and terahertz bands in the case of three-wave interaction in n-GaN films with the space change wave of millimeter band amplified due to negative differential resistance is studied. It is shown that amplification of the space change wave in n-GaN films may be achieved on higher frequencies f ≤ 500 GHz than when using GaAs. The case of three-wave resonant interaction of two counter-propagating waves with the space charge wave is considered for the waveguide on based on GaN film on dielectric substrate. It is shown that gain of electromagnetic waves of optical band may reach 20–40 dB on the waveguide lengths of up to 100 μm.

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Authors and Affiliations

  1. Universidad Autónoma del Estado de Morelos (UAEM), Cuernavaca, Morelos, Mexico

    V. V. Grimalsky & S. V. Koshevaya

  2. Taras Shevchenko National University of Kyiv, Kyiv, Ukraine

    Yu. G. Rapoport

Authors
  1. V. V. Grimalsky
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  2. S. V. Koshevaya
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  3. Yu. G. Rapoport
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Additional information

Original Russian Text © V.V. Grimalsky, S.V. Koshevaya, Yu.G. Rapoport, 2011, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2011, Vol. 54, No. 8, pp. 3–12.

Work was supported by CONACyT, Mexico.

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Grimalsky, V.V., Koshevaya, S.V. & Rapoport, Y.G. Superheterodyne amplification of electromagnetic waves of optical and terahertz bands in gallium nitride films. Radioelectron.Commun.Syst. 54, 401–410 (2011). https://doi.org/10.3103/S0735272711080012

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  • DOI: https://doi.org/10.3103/S0735272711080012

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