Abstract
The Ostwald ripening in metallic alloys and quasi-zero-dimensional semiconductor structures is investigated under conditions of mixed dislocation-matrix diffusion, when none of the terms j d and j v in the expression for the total diffusion flux can be ignored. The size distribution functions and time dependences of the maximum size r g and critical (average) size r k(〈r〉) of particles for different ratios x between the fluxes are obtained. It is demonstrated that mixed dislocation-matrix diffusion can occur in the course of the formation of CdS quantum dots prepared through chemical deposition.
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Original Russian Text © R.D. Vengrenovich, A.V. Moskalyuk, S.V. Yarema, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 1, pp. 13–18.
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Vengrenovich, R.D., Moskalyuk, A.V. & Yarema, S.V. Ostwald ripening under conditions of mixed-type diffusion. Phys. Solid State 49, 11–17 (2007). https://doi.org/10.1134/S1063783407010039
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DOI: https://doi.org/10.1134/S1063783407010039