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Ferromagnetic Behavior of Fe+ Implanted Si(100) Semiconductor

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Abstract

Fe ions have been implanted into Si (100) single crystals using ion implantation technique. The Fe ions have been accelerated to 45 keV with a dose of 5×1017 ion/cm2 at room temperature. The ions have been sent to the substrate’s surface at normal incidence. The temperature dependence of magnetization measurement was explored at the temperature range of 10–300 K. The implanted Si substrate was studied with Ferromagnetic Resonance (FMR) technique and Vibrating Sample Magnetometer (VSM). The FMR spectra were recorded by applying external magnetic field in different experimental geometries. FMR spectra were analyzed and the magnetic properties, which are the g-factor, effective magnetization and uniaxial anisotropy parameter, were estimated by simulation of the experimental data. The sample showed two-fold magnetic anisotropic symmetry. By fitting the Si-2p region obtained through XPS measurements it is observed that Fe and Fe compounds are present in the material.

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Authors and Affiliations

  1. Department of Physics, Science Faculty, Gebze Institute of Technology, Cayirova, 41410, Gebze, Turkey

    Resul Yilgin, Mehmet Kenan Yurtisigi, Adem Parabas, Melek Turksoy & Bekir Aktas

  2. Nanomagnetism and Spintronics Center, Gebze Institute of Technology, Cayirova, 41410, Gebze, Turkey

    Resul Yilgin & Bekir Aktas

  3. Department of Physics, Science and Letter Faculty, Marmara University, Goztepe, Istanbul, 980-8577, Turkey

    Mustafa Ozdemir

  4. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314, Dresden, Germany

    Andreas Kolitsch

Authors
  1. Resul Yilgin
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  2. Mehmet Kenan Yurtisigi
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  3. Adem Parabas
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  4. Melek Turksoy
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  5. Mustafa Ozdemir
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  6. Bekir Aktas
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  7. Andreas Kolitsch
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Correspondence to Resul Yilgin.

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Yilgin, R., Yurtisigi, M.K., Parabas, A. et al. Ferromagnetic Behavior of Fe+ Implanted Si(100) Semiconductor. J Supercond Nov Magn 25, 2731–2735 (2012). https://doi.org/10.1007/s10948-011-1253-y

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  • DOI: https://doi.org/10.1007/s10948-011-1253-y

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