Abstract
The specific application of neutron activation analysis in the research on the preparation of silicon integrated circuits is discussed. The high flux irradiation facility for large silicon wafers (up to 15 cm diameter) was used, the analytical procedure, and some typical results will be described.
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Verheijke, M.L., Jaspers, H.J.J., Hanssen, J.M.G. et al. Application of neutron activation analysis in the field of silicon technology for the modern electronic industry. Journal of Radioanalytical and Nuclear Chemistry, Articles 113, 397–403 (1987). https://doi.org/10.1007/BF02050513
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DOI: https://doi.org/10.1007/BF02050513