Abstract
Neutron activation analysis is used to study the process of Cu gettering in a silicon wafer in which differently doped and disordered regions are present. The results show a strong preference of the copper atoms to be concentrated in the n+(p+) and in the n+ regions. The effectivity of the gettering process can be increased by thermal growth of the defects present in the boron implanted layers.
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Theunissen, M.J.J., Jaspers, H.J.J., Hanssen, J.M.G. et al. Neutron activation analysis of the process of metal gettering in silicon slices. Journal of Radioanalytical and Nuclear Chemistry, Articles 113, 391–396 (1987). https://doi.org/10.1007/BF02050512
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DOI: https://doi.org/10.1007/BF02050512