Abstract
Shrinkage of prismatic dislocation loops, generated in intrinsic silicon single crystals by neon implantation and furnace annealing, was observed to take place after multi-scan electron-beam irradiation by transmission electron microscopy (TEM). The decrease in loop radius by climb motion was found to increase with increasing electron current density, until complete loop annealing and successive surface melting of samples was observed. By applying the classical theory of loop shrinkage by climb, the surface temperature of electron-beam-bombarded silicon was evaluated in the range from 1300 to 1700 K, for the particular current density values and irradiation conditions used. Optical pyrometry measurements were also made on silicon wafers irradiated in the same range of current densities; the temperature values obtained after correction for absorption by the electron gun glass window and silicon emissivity were found to be consistent with those derived from TEM observations. This result suggests that multi-scan electron-beam irradiation can be considered as a very fast annealing process.
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Servidori, M., Vecchi, I., Olzi, E. et al. Surface temperature evaluation in multi-scan electron-beam-irradiated silicon by TEM observations and optical pyrometry measurements. J Mater Sci 17, 301–307 (1982). https://doi.org/10.1007/BF00809066
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DOI: https://doi.org/10.1007/BF00809066