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Coevaporation phosphorus doping in Si grown by molecular beam epitaxy

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Abstract

Phosphorus-doped Si epilayers with bulk-like mobilities were grown by molecular beam epitaxy (Si-MBE) by coevaporation of phosphorus from a tin phosphide source. The behaviour of P doping as a function of growth parameters and of “potential enhanced doping” indicates a non-unity, almost growth-temperature independent incorporation efficiency with negligible surface segregation -a unique combination among coevaporated dopants in Si-MBE.

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Author notes

  1. R. A. A. Kubiak

    Present address: The Birches Industrial Estate, VG Semicon Ltd., Imberhorne Lane, RH19 1XZ, East Grinstead, Sussex, UK

Authors and Affiliations

  1. Solid State MBE Research Group, Sir John Cass Faculty of Physical Sciences and Technology, City of London Polytechnic, 31 Jewry Street, EC3N 2EY, London, UK

    R. A. A. Kubiak, G. Patel, W. Y. Leong, R. Houghton & E. H. C. Parker

Authors
  1. R. A. A. Kubiak
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  2. G. Patel
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  3. W. Y. Leong
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  4. R. Houghton
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  5. E. H. C. Parker
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Kubiak, R.A.A., Patel, G., Leong, W.Y. et al. Coevaporation phosphorus doping in Si grown by molecular beam epitaxy. Appl. Phys. A 41, 233–235 (1986). https://doi.org/10.1007/BF00616844

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  • DOI: https://doi.org/10.1007/BF00616844

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