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Sealing of bore-holes in Si crystals by epitaxial overgrowth below 560° C

  • Surfaces And Multilayers
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Abstract

Liquid phase epitaxy (LPE) is applied to seal small bore-holes (diameter 250–400 μm) in Si crystals by lateral overgrowth. The overgrowth layers have a typical thickness of 20 μm, are mechanically stable and gas-tight. Using Ga as solvent for the LPE process the overgrowth can be performed at temperatures as low as 560°C.

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Authors and Affiliations

  1. Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Pfaffenwaldring 57/VI, D-7000, Stuttgart 80, Fed. Rep. Germany

    R. Würschum & H. -E. Schaefer

  2. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000, Stuttgart 80, Fed. Rep. Germany

    E. Bauser & H. -J. Queisser

Authors
  1. R. Würschum
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  2. E. Bauser
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  3. H. -J. Queisser
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  4. H. -E. Schaefer
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Würschum, R., Bauser, E., Queisser, H.J. et al. Sealing of bore-holes in Si crystals by epitaxial overgrowth below 560° C. Appl. Phys. A 50, 583–585 (1990). https://doi.org/10.1007/BF00323451

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  • DOI: https://doi.org/10.1007/BF00323451

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