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Title: Study of stress relaxation in implanted silicon on sapphire structures using Raman spectroscopy
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Thin Solid Films [0040-6090] Bolotov, V V yr:1992


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Users interested in this article also expressed an interest in the following:
1. SAIHALASZ, GA. "STRESS RELIEVED SILICON ON SAPPHIRE BY LASER ANNEALING." Journal of Electronic Materials 8.5 (1979): 702-702. Link to Full Text for this item Link to SFX for this item
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