ExLibris header image
SFX Logo
Title: Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy
Source:

Thin Solid Films [0040-6090] Sanson, A yr:2013


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Qin, S. "Study of Carrier Mobility of Low-Energy High-Dose Ion Implantations." IEEE Transactions on Plasma Science 39.1 (2011): 587-592. Link to Full Text for this item Link to SFX for this item
2. Struder, L. "Effects of deep n-implants on the electrons' transport in silicon drift detectors." IEEE transactions on nuclear science 49.3 (2002): 1055-1058. Link to SFX for this item
3. Klug, J N. "n-type doping of silicon by proton implantation." 2011. Link to Full Text for this item Link to SFX for this item
4. Altermatt, P. P. P. "A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si : As and Si : B and usage in device simulation." Journal of applied physics 100.11 (2006): 113715-. Link to SFX for this item
5. Panknin, A. "Impurity gettering by high-energy ion implantation in silicon beyond the projected range." Applied physics letters 75.22 (1999): 3467-3469. Link to Full Text for this item Link to SFX for this item
6. Solmi, S. "Reverse annealing, clustering, and electron mobility in arsenic doped silicon." Journal of applied physics 87.2 (2000): 658-662. Link to SFX for this item
7. Philippe, M. Fauchet F. "Light emission from Si quantum dots." Materials today 8.1 (2005): 26-33. Link to SFX for this item
8. Fortunato, G. "Fabrication of ultra-shallow junctions with high electrical activation by excimer laser annealing." Materials science in semiconductor processing 4.5 (2001): 417-423. Link to SFX for this item
9. Haller, E. "Germanium: From its discovery to SiGe devices." Materials science in semiconductor processing 9.4 (2006): 408-22. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced