ExLibris header image
SFX Logo
Title: InGaP HBT technology for RF and microwave instrumentation
Source:

Solid-State Electronics [0038-1101] Low, Tom yr:1999


Collapse list of basic services Basic
Full text
Full text available via EZB-NALI5-00465 Elsevier Archive NL
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Borgarino, M. "On the effects of hot carriers on the RF characteristics of Si/SiGeheterojunction bipolar transistors." IEEE microwave and guided wave letters 10.11 (2000): 466-. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.