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Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals

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Abstract

The spark-source mass spectrometric assessment of silicon concentrations in silicon-doped vertical-gradient-freeze gallium arsenide is presented. The silicon concentrations determined are compared with the charge-carrier densities measured by means of the Hall effect with van der Pauw symmetry along the axis of a single crystal.

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Authors and Affiliations

  1. Johann Wolfgang Goethe-Universität, Institut für Kernphysik, August-Euler-Str. 6, 60486, Frankfurt, Germany

    B. Wiedemann & J. D. Meyer

  2. Zentrum für Funktionswerkstoffe GmbH, Windausweg 2, 37073, Göttingen, Germany

    D. Jockel & H. C. Freyhardt

  3. Friedrich-Alexander-Universität, Institut für Werkstoffwissenschaften VI, Martensstr. 7, 91058, Erlangen, Germany

    B. Birkmann & G. Müller

Authors
  1. B. Wiedemann
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  2. J. D. Meyer
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  3. D. Jockel
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  4. H. C. Freyhardt
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  5. B. Birkmann
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  6. G. Müller
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Additional information

Received: 27 December 2000 / Revised: 20 February 2001 / Accepted: 26 February 2001

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Wiedemann, B., Meyer, J., Jockel, D. et al. Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals. Fresenius J Anal Chem 370, 541–543 (2001). https://doi.org/10.1007/s002160100800

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  • DOI: https://doi.org/10.1007/s002160100800

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