Exchange between interstitial oxygen molecules and network oxygen atoms in amorphous SiO2 studied by O18 isotope labeling and infrared photoluminescence spectroscopy

Koichi Kajihara, Taisuke Miura, Hayato Kamioka, Masahiro Hirano, Linards Skuja, and Hideo Hosono
Phys. Rev. B 83, 064202 – Published 25 February 2011

Abstract

Amorphous SiO2 (a-SiO2) thermally annealed in an oxygen atmosphere incorporates oxygen molecules (O2) in interstitial voids. When the thermal annealing is performed in O182 gas, interstitial O182 as well as interstitial O16O18 and O162 are formed due to the oxygen exchange with the a-SiO2 network. The a1Δg(v=0)X3Σg(v=1) infrared photoluminescence band of interstitial O2 was utilized to quantitatively analyze the oxygen exchange, taking into account the influences of common network modifiers in synthetic a-SiO2 (SiOH, SiF, and SiCl groups). The presence of network modifiers does not significantly change the average rate of O18 transfer from interstitial O2 to the a-SiO2 network and its activation energy, suggesting that the network modifiers themselves do not serve as preferential oxygen exchange sites. When the concentration of SiOH groups is low, the oxygen exchange rate is distributed, indicating that only a small part of the network oxygen atoms participates in the oxygen exchange. However, the distribution of the oxygen exchange rate is distinctly narrow in the sample with high SiOH concentration. It is attributed to the redistribution of the network O18 atoms and the modification of the a-SiO2 network topology caused by reactions with mobile interstitial water molecules, which are transiently formed by dehydroxylation of paired SiOH groups. The activation energy for the average oxygen exchange rate is larger than that of the permeation of interstitial O2 in a-SiO2. Furthermore, the average exchange-free diffusion length of interstitial O2 below 900 °C (1 μm) is far larger than the scale of the interstitial voids in a-SiO2 (1 nm). These observations confirm that the oxygen exchange is not necessarily involved in the permeation of interstitial O2.

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  • Received 29 October 2010

DOI:https://doi.org/10.1103/PhysRevB.83.064202

©2011 American Physical Society

Authors & Affiliations

Koichi Kajihara1,*, Taisuke Miura2, Hayato Kamioka3, Masahiro Hirano4,5, Linards Skuja6, and Hideo Hosono5,7

  • 1Department of Applied Chemistry, Graduate School of Urban Environmental Sciences,Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji 192-0397, Japan
  • 2Research and Development Division, OMRON Laserfront Inc., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
  • 3Graduate School of Pure and Applied Sciences, University of Tsukuba,1-1-1 Tennodai, Tsukuba 305-8571, Japan
  • 4Japan Science and Technology Agency, Nibancho Chiyoda ku, Tokyo 102-0084, Japan
  • 5Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • 6Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, LV-1063 Riga, Latvia
  • 7Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

  • *kkaji@tmu.ac.jp

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Issue

Vol. 83, Iss. 6 — 1 February 2011

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