Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond

B. C. Rose, G. Thiering, A. M. Tyryshkin, A. M. Edmonds, M. L. Markham, A. Gali, S. A. Lyon, and N. P. de Leon
Phys. Rev. B 98, 235140 – Published 20 December 2018

Abstract

Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin-lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature-dependence characteristic of an Orbach process and is strongly anisotropic with respect to magnetic-field orientation. As the angle of the magnetic field is rotated relative to the symmetry axis of the defect, T1 is reduced by over three orders of magnitude. The electron spin coherence time (T2) follows the same temperature dependence but is drastically shorter than T1. We propose that these observations result from phonon-mediated transitions to a low-lying excited state that are spin conserving when the magnetic field is aligned with the defect axis, and we discuss likely candidates for this excited state.

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  • Received 10 October 2017
  • Revised 28 October 2018

DOI:https://doi.org/10.1103/PhysRevB.98.235140

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsAtomic, Molecular & Optical

Authors & Affiliations

B. C. Rose1, G. Thiering2,4, A. M. Tyryshkin1, A. M. Edmonds3, M. L. Markham3, A. Gali2,4, S. A. Lyon1, and N. P. de Leon1,*

  • 1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
  • 2Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary
  • 3Element Six, Harwell OX11 0QR, United Kingdom
  • 4Department of Atomic Physics, Budapest University of Technology and Economics, Budafokiút 8., H-1111 Budapest, Hungary

  • *npdeleon@princeton.edu

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Issue

Vol. 98, Iss. 23 — 15 December 2018

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