Possible flexoelectric origin of the Lifshitz transition in LaAlO3/SrTiO3 interfaces

Amany Raslan and W. A. Atkinson
Phys. Rev. B 98, 195447 – Published 30 November 2018

Abstract

Multiple experiments have observed a sharp transition in the band structure of LaAlO3/SrTiO3 (001) interfaces as a function of applied gate voltage. This Lifshitz transition, between a single occupied band at low electron density and multiple occupied bands at high density, is remarkable for its abruptness. In this work, we propose a mechanism by which such a transition might happen. We show via numerical modeling that the simultaneous coupling of the dielectric polarization to the interfacial strain (“electrostrictive coupling”) and strain gradient (“flexoelectric coupling”) generates a thin polarized layer whose direction reverses at a critical density. The Lifshitz transition occurs concomitantly with the polarization reversal and is first-order at T=0. A secondary Lifshitz transition, in which electrons spread out into semiclassical tails, occurs at a higher density.

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  • Received 12 August 2018
  • Revised 24 August 2018

DOI:https://doi.org/10.1103/PhysRevB.98.195447

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Amany Raslan and W. A. Atkinson*

  • Department of Physics & Astronomy, Trent University, Peterborough Ontario, Canada, K9L 0G2

  • *billatkinson@trentu.ca

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Issue

Vol. 98, Iss. 19 — 15 November 2018

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